GaN Semiconductor Devices Market Projected To Raise At USD 5.85 Billion By 2027

 San Francisco, 15 Dec 2020: The Report GaN Semiconductor Devices Market Size, Share & Trends Analysis Report By Product (Opto-semiconductors, Power Semiconductors), By Component, By Wafer Size, By End-use, By Region, And Segment Forecasts, 2020 - 2027

The global GaN semiconductor devices market size is expected to reach USD 5.85 billion by 2027, registering a CAGR of 19.8% from 2020 to 2027, according to a new study conducted by Grand View Research, Inc. The market growth can be attributed to the increasing applications of gallium nitride (GaN) in a wide range of semiconductor devices. Additionally, rapid technological advancements in GaN-based semiconductors are also anticipated to promote market growth. The demand for wireless communication devices, primarily in defense communication, is expected to drive the demand. Gallium nitride technology is being widely implemented in the development of amplifiers used in wireless communication, such as Class E, Class F, and Class C power amplifiers.

Aerospace and defense technology companies such as L3Harris Technologies, Inc.; Northrop Grumman Corporation; and BAE Systems are collaborating with government agencies for incorporating gallium nitride semiconductors in the military and radar applications. For instance, in February 2012, Northrop Grumman Corporation opened its Advanced Technology Laboratory for developing gallium nitride semiconductors for critical military programs. The company, along with the U.S. government, has invested over USD 300 million for developing and integrating GaN semiconductors in military systems for enhancing the capabilities of space, aircraft, and ground defense communication systems. These factors are expected to drive the demand for GaN semiconductors across wireless applications.

In recent years, the demand for gallium nitride semiconductor devices has increased in electric vehicle supply equipment such as onboard charging stations and EV charging kiosks. The lower switching frequency range of GaN devices makes them suitable for use in GaN-based DC-to-DC converters that are used in onboard charging stations, which bodes well for the market growth. Furthermore, the ongoing research and development activities worldwide aimed at the increased adoption of GaN devices in electric vehicles are anticipated to positively impact market growth. For instance, in October 2019, Nagoya University launched an electric car that entirely uses gallium nitride semiconductor devices and named it All GaN Vehicle. This vehicle is 20% more efficient than the current electric vehicles developed using SiC-based devices. On the contrary, the ongoing COVID-19 pandemic has largely impacted the sales and deployment of gallium nitride semiconductor devices in 2020. This impact is further anticipated to be witnessed in the coming years.

Access Research Report of GaN Semiconductor Devices Market @ https://www.grandviewresearch.com/industry-analysis/gan-gallium-nitride-semiconductor-devices-market

GaN Semiconductor Devices Market Report Highlights

• The gallium nitride radio frequency devices segment is expected to record the highest CAGR from 2020 to 2027 as a result of the growing demand for these devices in military applications such as Electronic Warfare (EW) systems and Active Electronically-Steered Array (AESA) radars
• The power ICs segment is anticipated to record a high CAGR over the forecast period as a result of the increasing demand for power converters used in data centers that run on high-voltage DC power distribution architecture
• The 8-inch wafer segment is anticipated to experience high traction owing to the rising use of these wafers in automotive applications such as Infotainment Head Unit (IHU) and Advanced Driver Assistance Systems (ADAS)
• The growing popularity of autonomous vehicles is boosting the demand for LiDAR sensors in driverless navigation systems, which is anticipated to be a major factor driving the growth of the automotive segment over the forecast period
• Asia Pacific is expected to emerge as the fastest-growing regional segment, owing to the increasing demand for efficient and high-performance RF components and a surge in electric vehicle production in countries such as China, Japan, and South Korea

List of Key Players of Gallium Nitride (GaN) Semiconductor Devices Market

• Cree, Inc.
• Efficient Power Conversion Corporation
• Fujitsu Ltd.
• GaN Systems
• Infineon Technologies AG
• NexGen Power Systems
• NXP Semiconductor
• Qorvo, Inc.
• Texas Instruments Incorporated
• Toshiba Corporation

Access Press Release of GaN Semiconductor Devices Market @ https://www.grandviewresearch.com/press-release/global-gan-gallium-nitride-semiconductor-devices-market